schottky barrier diode RB481Y-40 l applications l dimensions (unit : mm) l land size figure (unit : mm) rectifying small power l features 1)ultra small mold type. (emd4) 2)low v f 3)high reliability. l construction l structure silicon epitaxial planar l absolute maximum ratings (ta=25 ? c) symbol unit v rm v v r v io ma i fsm a tj ? c tstg ? c l electrical characteristics (ta=25 ? c) symbol min. typ. max. unit conditions v f1 - - 0.3 v i f =10ma v f2 - - 0.45 v i f =100ma i r1 - - 20.0 a v r =10v i r2 - - 90.0 a v r =40v storage temperature - 40 to + 125 (*1) rating of per diode:1/2 io (*2) rating of per diode parameter forward voltage reverse current average rectified forward current (*1) 200 forward current surge peak (60hz ? 1cyc) (*2) 1 junction temperature 125 l taping dimensions (unit : mm) parameter limits reverse voltage (repetitive peak) 40 reverse voltage (dc) 40 rohm : emd4 jeita : sc - 75a size week code 1.6 0.1 1.6 0.05 emd4 0.5 0.45 1.0 1.55 1pin mark 1/4 2011.10 - rev.a data sheet www.rohm.com ? 2011 rohm co., ltd. all rights reserved. >>>y>??<>>>> >>>?<>>>> >hz>>>y (1) (2) (4) (3) 0.5 0.5 >y>>?<>>>y >>>t>t?<>>>> >y>>a?<>>>y >y>>t?<>>>y >y>>a?<>>>y
RB481Y-40 1 10 100 1000 0 100 200 300 400 500 600 ta=125 c ta=75 c ta=25 c ta= - 25 c ta=150 c forward voltage v f (mv) v f - i f characteristics forward current:i f (ma) 0.01 0.1 1 10 100 1000 10000 100000 0 10 20 30 40 ta=125 c ta=75 c ta=25 c ta= - 25 c ta=150 c reverse current:i r ( m a) reverse voltage v r (v) v r - i r characteristics 1 10 100 0 10 20 30 capacitance between terminals:ct(pf) reverse voltage:v r (v) v r - ct characteristics f=1mhz 370 380 390 400 410 420 ta=25 c i f =100ma n=30pcs ave:397.1mv v f dispersion map forward voltage:v f (mv) 0 10 20 30 40 50 60 70 80 90 100 ta=25 c v r =40v n=30pcs ave:6.86 m a reverse current:v r ( m a) i r dispersion map 20 21 22 23 24 25 26 27 28 29 30 ave:27.2pf capacitance between terminals:ct(pf) ct dispersion map ta=25 c f=1mhz v r =0v n=10pcs 2/4 2011.10 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
RB481Y-40 0 5 10 15 20 ave:5.60a i fsm dispersion map peak surge forward current:i fsm (a) 8.3ms i fsm 1cyc 0 5 10 15 20 ave:6.5ns ta=25 c i f =0.1a i r =0.1a irr=0.1*i r n=10pcs trr dispersion map reverse recovery time:trr(ns) 0 5 10 1 10 100 8.3ms i fsm 1cyc 8.3ms peak surge forward current:i fsm (a) number of cycles i fsm - cycle characteristics 0 5 10 1 10 100 peak surge forward current:i fsm (a) time:t(ms) i fsm - t characteristics time i fsm 10 100 1000 0.001 0.01 0.1 1 10 100 1000 rth(j - a) rth(j - c) time:(s) rth - t characteristics transient thermal impedance:rth ( c /w) 0 0.05 0.1 0.15 0.2 0.25 0.3 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 d.c. d=1/2 sin( 180) forward power dissipation:pf(w) average rectified forward current io(a) io - p characteristics 3/4 2011.10 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
RB481Y-40 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0 10 20 30 40 d.c. d=1/2 sin( 180) reverse power dissipation:p r (w) reverse voltage v r (v) v r - p r characteristics 0 0.1 0.2 0.3 0.4 0.5 0 25 50 75 100 125 d.c. d=1/2 sin( 180) ambient temperature ta( c ) derating curve(io - ta) average rectified forward current io(a) t tj=125 c d=t/t t v r io v r =20v 0a 0v 0 0.1 0.2 0.3 0.4 0.5 0 25 50 75 100 125 d.c. d=1/2 sin( 180) average rectified forward current io(a) case temperature tc( c ) derating curve(io - tc) t tj=125 c d=t/t t v r io v r =20v 0a 0v 0 5 10 15 20 25 ave:2.25kv ave:21.42kv c=100pf r=1.5k c=200pf r=0 electrostatic discharge test esd(kv) esd dispersion map 4/4 2011.10 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
r 1 120 a ww w .rohm.com ? 20 1 1 rohm co., ltd. all rights reserved. notice rohm customer support system http://ww w . r ohm.com/contact/ thank you for your accessing to rohm p r oduct informations. mo r e detail p r oduct informations and catalogs a r e available, please contact us. notes
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